| 发明名称 |
Silicon nitride composite HDP/CVD process |
| 摘要 |
<p>The present invention provides a method for forming a barrier film on a substrate by depositing a first dielectric film, such as a tetra-ethyl-ortho-silicate (TEOS) film, on a substrate and depositing a silicon nitride film over the dielectric film. Preferably, the method further comprises depositing a silicate glass film over the barrier film. The present invention further provides a semiconductor device comprising: a polysilicon substrate; a dielectric film deposited over the polysilicon substrate; a silicon nitride film deposited over the dielectric film; a silicate glass film deposited over the silicon nitride film; and a metal film deposited selectively over the silicate glass film. <IMAGE></p> |
| 申请公布号 |
EP1039524(A2) |
申请公布日期 |
2000.09.27 |
| 申请号 |
EP20000300919 |
申请日期 |
2000.02.07 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHENG, LIE-YEA;CHAN, CHIU;MOGHADAM, FARHAD |
| 分类号 |
C23C16/40;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L21/768;H01L23/31;H01L23/522;(IPC1-7):H01L21/318 |
主分类号 |
C23C16/40 |
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