| 摘要 |
<p>A switching transistor (49, 50) to connect a pair of bit lines (15a1, 15a2) in a sub array (32a) to a pair of common bit lines (151, 152) in a sense amplifier band (35) is arranged between a P channel sense amplifier (25Pa) and an N channel sense amplifier (25N). Accordingly, the switching transistor (49, 50) can be used of a threshold value identical to that of the NMOSFET used in a logic circuit region, not a low threshold value. Therefore, the switching transistor (49, 50) can be reliably turned on/off in a narrow operating range. Accordingly, the complexity or capability of the drive circuit can be suppressed to a low level. As a result, the area for the semiconductor memory device can be reduced. <IMAGE></p> |
