<p>A magnetic device comprises an antiferromagnetic layer which is in direct contact with a ferromagnetic layer for inducing an exchange bias in the ferromagnetic layer. Thus, the ferromagnetic layer is pinned by the antiferromagnetic layer. The antiferromagnetic layer comprises a compound which is usable at high operating temperatures. <IMAGE></p>
申请公布号
EP1039490(A1)
申请公布日期
2000.09.27
申请号
EP19990105662
申请日期
1999.03.19
申请人
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
发明人
ALLENSPACH, ROLF;FOMPEYRINE, JEAN;FULLERTON, ERIC;LOCQUET, JEAN-PIERRE;MORAN, TIMOTHY;SEO, MARIA J.;SEO, JIN WON