发明名称 Pinning layer for magnetic devices
摘要 <p>A magnetic device comprises an antiferromagnetic layer which is in direct contact with a ferromagnetic layer for inducing an exchange bias in the ferromagnetic layer. Thus, the ferromagnetic layer is pinned by the antiferromagnetic layer. The antiferromagnetic layer comprises a compound which is usable at high operating temperatures. &lt;IMAGE&gt;</p>
申请公布号 EP1039490(A1) 申请公布日期 2000.09.27
申请号 EP19990105662 申请日期 1999.03.19
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 ALLENSPACH, ROLF;FOMPEYRINE, JEAN;FULLERTON, ERIC;LOCQUET, JEAN-PIERRE;MORAN, TIMOTHY;SEO, MARIA J.;SEO, JIN WON
分类号 G01R33/09;G11B5/39;G11B5/66;G11B5/74;H01F10/22;H01F10/32;H01F41/18;H01F41/22;H01F41/30;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01F10/08;G11C11/15;H01L43/10 主分类号 G01R33/09
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