| 摘要 |
<p>A ferroelectric memory chip has a memory cell region in which there is provided a plurality of memory cells, each having a ferroelectric capacitor 44, this ferroelectric memory chip being characterized in that there is formed, an electromagnetic wave shield layer 46, which shields the above-mentioned memory cell region against electromagnetic waves from the outside. The electromagnetic wave shield layer is constituted, for example, from a conductive layer 46, or a semiconductor layer 30, which can be provided above and/or below the memory cell region, and preferably is connected so as to have the same electric potential. Providing such an electromagnetic wave shield layer eliminates the direct irradiation of electromagnetic waves on a word line, plate line and bit line inside the memory cell region, thus making it possible to prevent a change in the storage state of the cell by an unexpected electric field being applied to the ferroelectric capacitor in the memory cell. <IMAGE></p> |
