Circuit for driving nonvolatile ferroelectric memory

摘要

The memory of the present invention includes a first cell array and a second cell array arranged in a horizontal direction. A first control signal generator and a second control signal generator provide control signals for selecting the first and second cell arrays, respectively. The circuit includes a first and a second signal lines for forwarding control signals from the first local control signal generator for selecting the first cell array from the two cell arrays, third and fourth signal lines for forwarding control signals from the second local control signal generator for selecting the second cell array. A plurality of first split wordline driving signal forwarders are included and each is connected to the first and third signal lines. A plurality of second split wordline driving signal forwarders is also provided, and each is connected to the second and fourth signal lines. An X-address signal forwarder enables the first and second split wordline driving signal forwarders of the plurality of first and second split wordline driving signal forwarders. The present invention simplifies the system of the split wordline driver and minimizes a layout area of the circuit.