Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film

摘要

The surface of a silicon single crystal substrate 2 is exposed to a mixed gas of hydrogen fluoride gas and hydrogen gas at 0 DEG C.-100 DEG C. to remove a natural oxide film 3 formed on the surface of silicon single crystal substrate 2. The method, as a pre-treatment to the formation of a silicon single crystal thin film, gives a smooth surface with a low temperature treatment and without causing the out-diffusion of the dopants or the auto-doping phenomenon.