| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing process of a quartz glass crucible for silicon single crystal pulling, which enables prevention of localized concentration of electrode arc heating of raw material quartz glass in a frame mold, thereby preventing deposition of evaporated matter from the raw material quartz glass on the electrode, etc., and accordingly prevention of falling of the deposited matter afterward, to inhibit reduction in purity of a quartz glass crucible manufactured. SOLUTION: The manufacturing process comprises: charging quartz fine particles into a frame mold 21 while rotating the frame mold 21, to form a quartz glass fine particle-packed layer 34 on the inner periphery of an inner member of the frame mold 21; heating the packed layer 34 from its inside with an arc electrode 29 to melt or sinter the packed layer 34; thereafter, cooling the melted or sintered material; and withdrawing the cooled body from the frame mold 21 to manufacture the objective quartz glass crucible; wherein as the arc electrode 29, a DC single phase arc electrode is used and the arc electrode 29 is received in a coaxial cylinder 28 with the electrode 29 and an inert gas is allowed to flow into the cylinder 28.
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