| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a silicon carbide single crystal, which is free from excess Si-enriched atmosphere. SOLUTION: Silicon powder 7 is arranged in a graphite crucible as a material containing at least silicon other than the silicon carbide powdery raw material 4. Further, a partition board 6, which is permeable to gaseous silicon, is provided between the silicon powder 7 and a silicon carbide single crystal substrate 3 so that gaseous silicon generated from the silicon powder 7 is supplied to the silicon carbide single crystal substrate 3 through the partition board 6. Thereby, since the geseous silicon is supplied through the partition board 6, the feed amount of the gaseous silicon is restricted and the formation of the excess Si-enriched atmosphere is prevented. Concretely, porous carbon is used as the partition board 6.
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