发明名称 Semiconductor memory device having a small memory cell driving circuit
摘要 In a semiconductor memory device including memory cells, first and second decoders generate first and second selection signals, and a driver circuit generates a drive signal for driving the memory cells. The driver circuit includes a transfer gate, controlled by the first selection signal, thus passing the second selection signal to generate the drive signal.
申请公布号 US6125074(A) 申请公布日期 2000.09.26
申请号 US19970855889 申请日期 1997.05.12
申请人 NEC CORPORATION 发明人 MURAKAMI, NOBUO;HASHIMOTO, KIYOKAZU
分类号 G11C11/413;G11C8/08;G11C11/407;G11C16/06;G11C17/18;(IPC1-7):G11C8/08;G11C8/10 主分类号 G11C11/413
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