| 摘要 |
PROBLEM TO BE SOLVED: To produce a II-VI group compound semiconductor crystal having excellent crystal properties by interposing a buffer film causing no adhesion to a support member for supporting a seed crystal between the seed crystal and the support member and thereby inhibiting stress from being applied to the seed crystal from the support member, in the cooling stage after the crystal growth stage. SOLUTION: In this method, a raw material polycrystal is placed in a growth chamber and the growth of a II-VI group compound semiconductor crystal on a seed crystal is performed by a sublimation or halogen chemical transport process, wherein a buffer film is placed between the seed crystal and a support member for supporting the seed crystal and preferably, the buffer film is also additionally placed on the surface of a member to be brought into contact with the crystal being grown. The buffer film consists preferably of a material which causes no decomposition, no melting and no sublimation under environmental conditions of the crystal growth and is unreactive to the seed crystal, support member and halogens, or more specifically, carbon, a carbide such as silicon carbide, a nitride such as silicon nitride, aluminum nitride or boron nitride, an oxide such as aluminum oxide or zinc oxide, a metal such as platinum, iridium or tungsten, or the like is used as the buffer film. Also, both the part of the support member, being in contact with the seed crystal, and the surface of the seed crystal, being on the side of the support member, are preferably smooth-planes.
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