发明名称 Integrated chip multiplayer decoupling capacitors
摘要 A multilayer decoupling capacitor structure is disclosed, having a first decoupling capacitor with one electrode formed in a conductively doped silicon substrate and a second electrode made of conductively doped polysilicon. A third bifurcated conductive layer disposed above the second electrode in conjunction with a fourth conductive layer above the third layer form a second and third decoupling capacitor. The first decoupling capacitor serves to decouple circuitry associated with dynamic random access memory cells, while the second and third decoupling capacitors provide decoupling for further circuitry.
申请公布号 US6124163(A) 申请公布日期 2000.09.26
申请号 US19990459131 申请日期 1999.12.10
申请人 MICRON TECHNOLOGY, INC. 发明人 SHIRLEY, BRIAN M.;CASPER, STEPHEN L.;LOWREY, TYLER A.;DUESMAN, KEVIN G.
分类号 H01L21/02;H01L27/06;H01L27/105;H01L29/92;(IPC1-7):H01L21/283 主分类号 H01L21/02
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