发明名称 HIGH-FREQUENCY SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high-frequency sputtering device in which the influence of high-frequency noise generated from a target is suppressed. SOLUTION: A target 3 in which the face to be sputtered on the front side is exposed to the inside of a treating chamber 1 is applied with high-frequency voltage by a high-frequency power source 4 and is sputtered. The back of the target 3 is provided with a base board 33 via an insulating member 30, and a space between the target 3 and the base board 33 is fed with pure water by a cooling mechanism 8 and is cooled. The base board 33 is grounded via plural capacitors arranged axially symmetrically so as to control the volumetric impedance to <=10 ohm. To a rotating mechanism 7 rotating a magnet unit 5 provided on the space between the target 3 and the base board 33, the base board 33 works as a shield, and high-frequency noise from the target 3 is cut-off.
申请公布号 JP2000265267(A) 申请公布日期 2000.09.26
申请号 JP19990072805 申请日期 1999.03.17
申请人 ANELVA CORP 发明人 SAHASE HAJIME;ISHIHARA MASAHITO
分类号 C23C14/34;C23C14/35;(IPC1-7):C23C14/34 主分类号 C23C14/34
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