PRODUCTION OF SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL PRODUCED WITH THE SAME AND SILICON WAFER FROM THE SAME CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal production process which enables growth of a silicon single crystal bar having high uniformity in interstitial oxygen concentration in the growth direction of the single crystal being grown, in a high yield and with high productivity, in a transverse magnetic field-applied CZ(Czochralski) method. SOLUTION: In the silicon single crystal production process for growing a silicon single crystal bar while applying a magnetic field perpendicular to the crystal growth axis to the melt in the crucible, when a silicon single crystal is pulled up from a silicon melt in a quartz crucible, the crystal growth is performed so that any one of a high temperature part and a low temperature part, both caused in the surface of the silicon melt in the crucible, is always positioned at the solid-liquid interface in the process of crystal growth.