发明名称 FORMATION OF FILM USING ELECTRON BEAM PLASMA
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a film using electron beam plasma capable of forming a film of high quality such as a diamondlike carbon film. SOLUTION: The inside of a reaction chamber C2 storing a body to be treated is filled with a gaseous starting material contg. carbon atoms and hydrogen atoms of low pressure, on the inside of this reaction chamber, and electron beams generated by a cathode electrode 14 and accelerated by accelerating electrodes 12 and 13 are made incident toward the body to be treated, by which the body to be treated is negatively electrified, and furthermore, the electrons are collided with the molecules of the gaseous starting material to generate the radicals of a hydrocarbon, and these radicals are attracted into the negatively electrified body to be treated to form a diamondlike carbon film. The incidence of the electron beams is controlled in such a manner that irradiation for forming the film and stoppage for promoting the emission of gas generated in the film via a sheath are repeated.
申请公布号 JP2000265277(A) 申请公布日期 2000.09.26
申请号 JP19990066242 申请日期 1999.03.12
申请人 NICHIMEN DENSHI KOKEN KK 发明人 SAKAMOTO YUICHI
分类号 H01L21/205;C23C16/26;C23C16/27;C23C16/48;C30B25/00;C30B29/04;(IPC1-7):C23C16/48 主分类号 H01L21/205
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