发明名称 |
Method for forming conformal barrier layers |
摘要 |
The present invention provides a method for forming barrier layers in a channel or via opening by using a plasma etching technique to etch back the barrier layer which reduces the electrical resistance of the barrier layer, maintains its barrier effectiveness and enhances the subsequent filling of the channel or via opening by conductive materials.
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申请公布号 |
US6124203(A) |
申请公布日期 |
2000.09.26 |
申请号 |
US19980206669 |
申请日期 |
1998.12.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
JOO, YOUNG-CHANG;BROWN, DIRK;CHAN, SIMON S. |
分类号 |
H01L21/768;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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