Rapid thermal anneal with a gaseous dopant species

摘要

Rapid thermal anneal with a gaseous dopant species is disclosed. In one embodiment, a method includes three steps. In the first step, at least one gate is formed over a semiconductor substrate. In the second step, at least one spacer for each of the gates is formed, where each spacer is adjacent to an edge of its corresponding gate. In the third step, a rapid thermal anneal with a gaseous dopant species is performed to form source and drain regions within the substrate. Desirably, the source and drain regions meet the substrate underneath the gate at shallow junctions.