Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circuit

摘要

In a semiconductor circuit using a silicon film in which crystals grow in the direction parallel to a substrate, the distance between the position of a starting region of crystal growth and the position of the respective active layers are made the same. Thus, the difference of the characteristics due to the difference of the distance of crystal growth is corrected.