发明名称 |
Method of removing copper oxide within via hole |
摘要 |
A method of removing a copper oxide layer within a via hole. A copper layer is formed. A dielectric layer is formed on the copper layer. A via hole is formed to penetrate through the dielectric layer and expose a part of the copper layer within the via hole. The exposed copper layer reacts with oxygen in air to form a copper oxide layer. Using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, the copper oxide layer is removed.
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申请公布号 |
US6124204(A) |
申请公布日期 |
2000.09.26 |
申请号 |
US19980112951 |
申请日期 |
1998.07.09 |
申请人 |
UNITED SILICON INCORPORATED |
发明人 |
LAN, SHIH-MING;LIAO, HO-SUNG;MENG, HSIEN-LIANG |
分类号 |
H01L21/02;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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