发明名称 Method of removing copper oxide within via hole
摘要 A method of removing a copper oxide layer within a via hole. A copper layer is formed. A dielectric layer is formed on the copper layer. A via hole is formed to penetrate through the dielectric layer and expose a part of the copper layer within the via hole. The exposed copper layer reacts with oxygen in air to form a copper oxide layer. Using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, the copper oxide layer is removed.
申请公布号 US6124204(A) 申请公布日期 2000.09.26
申请号 US19980112951 申请日期 1998.07.09
申请人 UNITED SILICON INCORPORATED 发明人 LAN, SHIH-MING;LIAO, HO-SUNG;MENG, HSIEN-LIANG
分类号 H01L21/02;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/02
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