OXIDE SUPERCONDUCTIVE FILM, ELECTRIC DEVICE USING SAME AND THEIR PRODUCTION

摘要

PROBLEM TO BE SOLVED: To obtain a bicrystal oxide superconductive film free from sinuosity at the joining interface by forming a film having a long straight chain joining interface on a bicrystal substrate by a liquid phase growth method. SOLUTION: The length of the straight chain joining interface is >=1 μm. Starting materials forming an REBaCuO (RE is rate earth elements such as Y, Nd and Sm) type oxide superconductor are put in a furnace 1 and a bicrystal substrate 3 of MgO or the like with a thin film of a seed crystal formed on the surface is disposed just above the starting materials. The starting materials are melted by heating to form a melt 2, the substrate 3 which is slowly pulled up under rotation by a rotating shaft 5 is immersed in the surface of the melt and a crystal is grown on the substrate. The objective superconductive film having a joining interface at the same position as the substrate 3 and having the same joining tilt and (θ) as the substrate is formed on the substrate. An electronic device such as a switching element, a current limiting device or SQUID is obtained by using the superconductive film.