| 摘要 |
PROBLEM TO BE SOLVED: To obtain a target material of high quality at a low cost by rapidly cooling a Ge-Te alloy contg. Ge and Te in a specified ratio and an Sb-Te alloy contg. Sb and Te in a specified ratio by an inert gas atomizing method to form powder, uniformly mixing it and subjecting it to press sintering. SOLUTION: A Ge-Te alloy in which Ge/Te=1/1 and an Sb-Te alloy in which Sb/Te=0.5 to 2.0 are rapidly cooled by an inert gas atomizing method to form stable powder, which is uniformly mixed and is subjected to press sintering to produce a target material for sputtering. Moreover, at the time of producing the Ge-Te alloy or Sb-Te alloy powder, when the Ge, Te and Sb elements are melted, and, after that, the elements in a high temp. state are alloyed, by utilizing the rapid cooling pulverizing effect of gas atomizing, the precipitation of elemental simple substance phases by slow cooling is prevented to stabilize the alloy, furthermore, the compositional distribution of the thin film by the refining of the crystal grains can be uniformized, the increase of the value of oxygen is suppressed, and cracking and abnormal discharge can be suppressed.
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