发明名称 SOLUTION RAW MATERIAL FOR FORMING COPPER THIN FILM FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION AND COPPER THIN FILM MADE THEREFROM
摘要 PROBLEM TO BE SOLVED: To obtain a high film forming rate, to efficiently dissolve a raw material on a substrate, to increase its volatility and to make excellent its adhesion for a base film. SOLUTION: This raw material is composed by adding an organometallic copper compd. contg. monovalent copper metal such as copper+1 (allyltrimethylsilane)(hexafluoroacetylacetone) with a 1st compd. of one or >=two kinds selected from the group of the hydrate ofβ-diketone, trifluoroacetone, the hydrate of trifluoroacetone, hexafluoroacetone, the hydrate of hexafluoroacetone, a hydroxy compd. of aβ-diketone, the hydrate of the hydroxy compd. ofβ-diketone and the hydrate of pentyne. Moreover, it is composed by adding an organometallic copper compd. contg. monovalent copper metal with a 2nd compd. such as an alkylsilane, the hydrate of the alkylsilane, an alkoxysilane and the hydrate of the alkoxysilane and/or a 3rd compd. such as each derivative or an acetylene and an alkene.
申请公布号 JP2000265273(A) 申请公布日期 2000.09.26
申请号 JP19990014740 申请日期 1999.01.22
申请人 MITSUBISHI MATERIALS CORP 发明人 SAI ATSUSHI;HIRAKOSO HIDEYUKI;OGI KATSUMI
分类号 C23C16/18;H01L21/285;(IPC1-7):C23C16/18 主分类号 C23C16/18
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