| 摘要 |
PURPOSE: An integrated circuit device provides a planar inter-level dielectric layer including a fluoric silicate glass(FSG) layer for protecting conductive layers from being exposed to fluorine. CONSTITUTION: An integrated circuit device(28) comprises a semiconductor substrate(30), a conductive layer(32), and a complex dielectric layer. The conductive layer is adjacent to the semiconductor substrate and includes patterned conductive lines having gaps(40) between conductive lines, in which some of the patterned conductive lines have different widths. The complex dielectric layer is a fluoric silicate glass(FSG) layer(36) for filling up the gaps between the patterned conductive lines and is formed on the patterned conductive lines, in which the FSG layer has a peak(42) of a constant height on the conductive layer, and an oxide layer(38) not doped on a plane of the FSG layer. |
