| 摘要 |
PURPOSE: A thin film transistor is provided to prevent resistance increase and overhang configuration at electrodes where low resistance material and high melting point metal are stacked together. CONSTITUTION: A main wiring layer(2) of a metal is selected from a group including Al an Cu or an alloy based thereon. The layer(2) is stacked between a lower wiring layer(1) and an upper wiring layer(3). The lower wiring layer(1) is composed of a material based on a metal and containing nitrogen. The metal is selected from a group including Ti, Mo, W, Cr, Al and Cu or an alloy thereof. The upper wiring layer(3) is composed of a material based on a metal and containing nitrogen. The metal is selected from a group including Ti, Mo, W, Cr, Al and Cu or an alloy thereof. Nitrogen contents of the lower and upper wiring layers(1,3) are adjusted different by using a different metal or alloy, or by using a material which is based on same metal or alloy and contains nitrogen.
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