| 摘要 |
PCT No. PCT/SE95/01284 Sec. 371 Date Jun. 21, 1997 Sec. 102(e) Date Jun. 21, 1997 PCT Filed Oct. 31, 1995 PCT Pub. No. WO96/13862 PCT Pub. Date May 9, 1996In a semiconductor device including a silicon substrate, an insulating layer on the silicon substrate, a silicon layer on the insulating layer, the silicon layer being weakly doped with impurities of a first conduction type, a base region extending into the silicon layer from the free surface thereof, the base region being doped with impurities of a second conduction type, an emitter region extending into the base region from the free surface thereof, the emitter region being heavily doped with impurities of the first conduction type, and at least one collector region extending into the silicon layer from the free surface thereof at a lateral distance from the base region, the collector region being doped with impurities of the first conduction type, a floating collector region is provided in the silicon layer between the insulating layer and the base region at a distance from the base region. The lateral extension of the floating collector region is larger than that of the emitter region and smaller than that of the base region and the floating collector region is more doped with impurities of the first conduction type than the silicon layer. |
