| 摘要 |
PURPOSE: A vertical bipolar transistor and manufacturing method is provided to minimize variation in its characteristics. CONSTITUTION: An insulating side wall spacer composed of a silicon nitride film(10) and a silicon oxide film(9) is formed on the side surface of an opening 101 formed in a base electrode polysilicon film(7). The thickness (= WD) of the insulating side wall spacer is made thicker than the maximum thickness (= WF) within a range of variation in thickness of a polycrystalline film(12) grown from the side surface of the base electrode polysilicon film(7) exposed inside the opening(101) (namely, WD > WF). The size of an opening for forming an emitter electrode polysilicon film(16) on an intrinsic base(11) is not influenced by the thickness of a polycrystalline film(12) epitaxially growing from the side surface of the polysilicon film(7) for the base electrode, but is defined by the side wall spacer formed on a portion of the side surface of the base electrode polysilicon film. Therefore, emitter area hardly disperses, and electric characteristics become stable.
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