| 摘要 |
PURPOSE: Image sensor structure and it's fabrication method is provided to simply the process and decrease the damage of base polysilicone. CONSTITUTION: Image sensor structure and it's fabrication method comprising a thin film transistor on a transparent substrate, a first inter film(5) on the thin film transistor, a photo detector, photo diode on the first inter film; a second inter film on the photo diode and on the first inter film; the first inter film and the second inter film(11) are consist of the different material each other; at least a contact hole comprised material with polysilicone of the thin film transistor, is formed after removing of the second inter film(11) on the around of the region of forming the contact hole(12). |
