METHOD FOR MANUFACTURING ALUMINUM-GALLIUM-INDIUM STRUCTURE

摘要

PURPOSE: A method for manufacturing an AlxGazInzN structure is provided high quality reflecting surfaces to both sides of AlxGazInzN device by inserting one or two mirror stacks including a dielectric distributed Bragg reflector(D-DBR) between an AlxGazInzN active region and a host substrate. CONSTITUTION: A method for manufacturing an AlxGazInzN structure comprises the steps of: adhering a host substrate to a first mirror stack; forming an AlxGazInzN structure on the sacrificial growth substrate; forming a wafer bond interface; eliminating the sacrificial growth substrate by a laser solution; and depositing an electrical connection point on the AlxGazInzN structure.