| 摘要 |
PURPOSE: A semiconductor device is provided to improve a characteristic of an integrated circuit by changing a thickness of a back side gate insulating layer in transistors having different operating mode. CONSTITUTION: In a semiconductor device(1) including a semiconductor active layer(5,6), back side gate electrodes(8,9), and a plurality of metal oxide semiconductor field effect transistors(MOSFETs), the semiconductor active layer is formed in an insulating layer on a supporting substrate. The back side gate electrodes face each other through the surface of the supporting substrate in the semiconductor active layer and the back side gate insulating layer. The plurality of MOSFETs have respective surface gate electrodes(10) facing each other through the back gate electrode of the semiconductor active layer and the surface gate insulating layer on the back side. The plurality of MOSFETs includes a first MOSFET in which the back side gate electrode is separately insulated from the surface gate electrode, and a second MOSFET in which the back side gate electrode is electrically connected to the surface gate electrode. The back side gate insulating layer of the second MOSFET is thinner than the back side gate insulating layer of the first MOSFET.
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