| 摘要 |
PROBLEM TO BE SOLVED: To provide an In-rich nitride semiconductor, capable of red light emission and a nitride semiconductor light emitting element using this as a light emitting layer, and a method for manufacturing them. SOLUTION: An InAlN layer 101 is grown at about 500 deg.C on a GaN layer 100 using an MOCVD method, and an AlGaN layer 102 as a cap layer for covering the InAlN layer 101 is grown at about 500 deg.C, so that the InAlN layer 101 can be formed as an incomplete crystal body. Moreover, a GaN layer 103 is grown in the AlGaN layer 102 at about 1,000 deg.C, so that crystallization can be progressed and phase isolation can be generated in the InAlN layer 101, and a nitride semiconductor in which an In-rich region and an Al rich region coexist can be formed. |
