发明名称 PELLICLE FOR LITHOGRAPHY WITH IMPROVED LIGHT RESISTANCE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a pellicle for lithography consisting of a pellicle film which has a long life without deterioration or decomposition by light even when the film is irradiated for a long time with vacuum UV rays of short wavelength and which has high transmissivity for light and high performance without changes, by treating the pellicle film with fluorine gas to form a fluorinated layer on the film surface. SOLUTION: A pellicle film comprising an amorphous perfluoropolymer is treated with fluorine gas to form a fluorinated layer on the film surface. By forming a fluorinated layer of high density on the surface of the pellicle film, the fluorinated layer of high density causes recombination of opened bonds due to the radical reaction even under the conditions that the film absorbs light to produce radicals and deterioration is accelerated. Thus, deterioration of the film can be suppressed to an extremely low level. The fluorine atom content on the film surface is preferably at least >=60 mol.%. However, when the content exceeds 80 mol.%, the film strength may decrease, so the fluorine atom content is especially preferably controlled to 60 to 80 mol%.</p>
申请公布号 JP2000258895(A) 申请公布日期 2000.09.22
申请号 JP19990062513 申请日期 1999.03.10
申请人 SHIN ETSU CHEM CO LTD 发明人 SHIRASAKI SUSUMU;SAKURAI IKUO;KASHIDA SHU
分类号 G03F1/62;(IPC1-7):G03F1/14 主分类号 G03F1/62
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