| 摘要 |
PROBLEM TO BE SOLVED: To make an impurity region fine, when a plurality of impurity areas are formed selectively in a semiconductor substrate. SOLUTION: This semiconductor device is provided with a first conductivity collector substrate 1, a plurality of grooved second conductivity base regions 5 at a plurality of points on the surface of the collector substrate 1, one or a plurality of first conductivity emitter regions 8 on surfaces among the base regions 5 on the collector substrate 1, and a diffusion base region 4 which impurities are diffused in a first conductivity region around the grooved the region 5 from the base region 5.
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