SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit which is provided with an analog multiplexer circuit, composed of a MOS transistor and whose electrostatic discharge damage resistant amount is improved. SOLUTION: This semiconductor integrated circuit is provided with an analog multiplexer circuit 21 composed of a CMOSFET. A first protective diode 22 and a second protective diode 23, whose breakdown voltages are at least twice the operating voltage of the analog multiplexer circuit 21 and whose breakdown voltages are lower than the breakdown voltage of a CMOSFET gate oxide film are inserted across a VCC terminal and a GND terminal and across the VCC terminal and a VEE terminal of the analog multiplexer circuit.