| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a crystal and a method of manufacturing a semiconductor device, which are capable of heavy p-type doping using a material gas which does not corrode-cambers. SOLUTION: TEGa, AsH3 and Cl2H2 are introduced into a chamber 10 by an H2 carrier gas. TEGa and AsH3 react on a heated GaAs substrate 18, thereby growing thereon a compound semiconductor crystal. During the growth of the GaAs compound semiconductor crystal, Cl2H2 is given thermal energy on the grown crystal surface and is thermally decomposed. As a result, C mixes into the GaAS grown crystal as a carrier, thereby subjecting a GaAs crystal layer to p-type doping. It is verified from experiments that the Cl2H2 gas neither produces memory effects nor damages the chamber 10. Furthermore, by using the Cl2H2 gas as a p-type doping material, an HEMT can be produced continuously within the same chamber 10, after the p-type doping process.
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