发明名称 METHOD AND DEVICE FOR TREATING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To achieve uniform treatment in a chamber for a large-aperture water by mixing a pair of separate gas flow that reacts each other and then immediately allowing it to flow into a wafer treatment chamber. SOLUTION: Gas pipes 30 and 32 are connected to mixing blocks 20 and 22, respectively, and supply a pair of separate reactive gas flow. A set of independent gas paths exist in the gas pipes 30 and 32 to supply a non-mixed gas to the mixing blocks 20 and 22. Each reaction gas flow flows in a tangential direction via two cutouts and flows into a cavity where gases are strongly mixed each other. Then, the mixed gas immediately flows down via a hollow stub. Then, a face plate with a larger number of through holes than a block plate further disperses the reactive gas into a uniform mixture that flows and falls onto the exposed surface of the wafer. The flowing reactive gas is evacuated from the lower portion of each chamber by a pump.
申请公布号 JP2000260763(A) 申请公布日期 2000.09.22
申请号 JP20000047775 申请日期 2000.02.24
申请人 APPLIED MATERIALS INC 发明人 VENKATARANAN SHANKAR;HENDRICKSON SCOTT;SHMURUN INNA;NGUYEN SON T
分类号 H01L21/31;C23C16/44;C23C16/455;H01L21/205;(IPC1-7):H01L21/31 主分类号 H01L21/31
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