| 摘要 |
PROBLEM TO BE SOLVED: To prevent electrons or holes from being trapped by carriers in a light receiving layer and to increase energy conversion efficiency of the light receiving device, by laminating an n-type group III nitride semiconductor layer, a light receiving layer made of an undoped InXGa1-XN, and a p-type group III nitride semiconductor layer. SOLUTION: A light receiving device 1 has a structure, in which a buffer layer 11, an n-type group III nitride semiconductor layer 12, a light receiving layer 13, a p-type nitride semiconductor layer 14 are sequentially laminated on a sapphire substrate 10. The light receiving layer 13 is made of an un-doped InXGa1-XN (0<X<1). The undoped InXGa1-XN is an n-type in an un-doped state, but the carrier electrons in the light receiving layer 13 are minority. Therefore, among holes generated in the light receiving layer 13 through the irradiation of light, number of holes trapped by the carrier electrons in the light receiving layer 13 is small. Therefore, this suppresses loss of the number of holes moving to the p-layer 14 from the light receiving layer 13, thereby increasing the energy conversion efficiency of the light receiving device.
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