SEMICONDUCTOR SUBSTRATE FOR MEASURING AMOUNT OF ETCHING AND ITS MEASUREMENT METHOD

摘要

PROBLEM TO BE SOLVED: To accurately verify nondestructively amount of etching, especially the amount of over-retching. SOLUTION: A measurement layer 2, that has electrical resistance larger than that of a substrate layer 1 and is formed as one portion of the substrate layer 1 at a side where a contact 6 is formed, is formed. By measuring a current flowing to a part that is formed by the contact 6 formed between one end side of the contact 6 and that of the substrate layer 1 and the substrate layer 1, and a depth where the contact enters the measurement layer 2 can be verified. The value of the depth verified in this manner can become an index for accurately controlling the amount of over-retching, when forming a regular contact 6'. A shallow over-etching can be controlled effectively.