| 摘要 |
PROBLEM TO BE SOLVED: To reduce thermal conductivity and to improve performance or the Seebeck coefficient without degrading electrical conductivity by melting additive elements in Si, such that the Si contains a predetermined amount of additive elements, rapidly cooling the molten substance, and powdering, forming and sintering the cooled substance. SOLUTION: Additive elements for making a p-type or n-type semiconductor are melted in Si separately or in combination, such that the Si contains 0.001 atom% to 20 atom% additive elements, and the molten substance is cooled normally or rapidly and the cooled substance is powdered, formed, and sintered. A texture, in which a phase rich in the additive elements such as Ge is dispersed and formed at the grain boundary rich in Si of a Si-based sintered thermoelectric conversion material, is formed by the segregation of the additive elements in a solid solution in a powdered raw material caused when the powdered raw material is sintered, whereby the material or a powder showing high Seebeck coefficient is obtained. Furthermore, by sintering the powder, a Si-based sintered thermoelectric conversion material showing a high Seebeck coefficient is obtained.
|
