| 摘要 |
PROBLEM TO BE SOLVED: To reutilize a substrate and to eliminate the need for a backlap process by providing a substrate and an elimination layer that is provided on the substrate and can be selectively etched to the substrate. SOLUTION: When a semiconductor device is an LED, an elimination layer 2 is provided on a substrate 1 and a separation layer 5 is provided on the elimination layer 2, thus selectively etching the elimination layer 2. For example, the n-type GaAs substrate 1 is used. Then, the aluminum gallium arsenic (AlGaAs) layer 2 is grown as an elimination layer on the substrate 1 by liquid- phase epitaxial growth using a source where GaAs and aluminum(Al) are dissolved in Ga. Then, liquid-phase epitaxial growth using a source where GaAs and Si as a dopant are added into Ga is made, thus obtaining an n-type GaAs layer and a p-type GaAs layer 4. The separation layer 5 is formed by the n-type GaAs layer 3 and the p-type GaAs layer 4. Further, a p-type AlGaAs layer is grown on the p-type GaAs layer 4 as needed. |
