| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent interdiffusion of gas between adjacent film-forming chambers so as to achieve stable characteristics of thin films, by providing an intermediate chamber at the front and the back of the film-forming chambers, where photoelectric conversion parts are formed. SOLUTION: For films in film-forming chambers separated from one another with appropriate tension, a film-forming material gas is emitted from the surface of an electrode 23, which is a parallel flat plate disposed in the lower part of the film-forming chamber, so as to stabilize the pressure at a suitable level. Then, power is supplied to the lower electrode 23 via high-frequency power supply and an matching device, and an electric field is formed between the electrode 23 and a grounding electrode 24 disposed in the upper part of the film-forming chamber, so that a plasma is generated. Therefore, intermediate chamber are provided at the front and the back of the film-forming chambers, so that in the process of sequentially stacking a p layer, an i layer, and an n layer in the same vacuum chamber, it is possible to positively separate the mutually film-forming chambers. Consequently, contamination can be prevented, and film formation is made possible without being exposed to mechanical external forces other than the tension required for transportation.</p> |
