发明名称 SEMICONDUCTOR MATERIAL FOR THERMOELECTRIC CONVERSION AND MANUFACTURE OF THE SAME
摘要 PROBLEM TO BE SOLVED: To easily and efficiently manufacture semiconductor materials for thermoelectric conversion for a thermoelectric converting module, whose performance exponents can be improved by distributing inexpensive, easily treatable, and high productive metallic or alloy powder to semiconductor materials for thermoelectric conversion using CoSb3 as main components, and decreasing thermal conductivity, and a method for easily and efficiently manufacturing the semiconductor materials by using a general baking process. SOLUTION: Powder, obtained by mixing metallic or alloy powder having grain diameters ranging from submicrons to several hundreds of microns in main components whose chemical composition, is represented by CoSbx (2.7<x<3.4) is molded into a desired shape and baked in a reducing atmosphere, such as hydrogen or a non-oxidizing atmosphere such as nitrogen in a temperature lower than the melting temperature of the metallic or alloy powder, so that semiconductor materials for thermoelectric conversion whose performance exponents are improved can be obtained. It is desirable that the dopant amounts of the distributed materials be set at 0.01 wt.%-20 wt.% with respect to CoSbx.
申请公布号 JP2000261048(A) 申请公布日期 2000.09.22
申请号 JP19990058845 申请日期 1999.03.05
申请人 NGK INSULATORS LTD;NISSAN MOTOR CO LTD 发明人 SHINNO MAKIKO;MIYOSHI SANETO;FURUYA KENJI;KUSHIBIKI KEIKO;KOBAYASHI MASAKAZU
分类号 H01L35/18;H01L35/26;H01L35/34;(IPC1-7):H01L35/18 主分类号 H01L35/18
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