| 摘要 |
PROBLEM TO BE SOLVED: To provide a minute semiconductor device which reduces coupling capacitance and can restrain leakage current. SOLUTION: This semiconductor device is constituted of an element-isolation insulating film 3b, which is formed into a protruding shape on the main face of a semiconductor substrate 1. In addition, the device is constituted of an active region on the main face of the semiconductor substrate 1, which is surrounded by the element-isolation insulating film 3b, a gate-electrode interconnection 9b which is formed on the element-isolation insulating film 3b, and a gate-electrode interconnection 9 which is formed on the active region via a gate insulating film 7. In this case, the height of the surface of the gate- electrode interconnection 9 is made substantially identical to that of the gate- electrode interconnection 9b by having their opposite areas reduced. Thereby, the coupling capacitance of the semiconductor device is reduced. |
