| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a SRAM(static RAM) in which an error of a cell ratio based on dispersion of manufacturing is compensated, data holding operation is stable, and write-in operation and recovery operation are fast. SOLUTION: In a SRAM, a power source of a word line driver 21 is supplied from a series node of a first transistor and a second transistor being same type and same size as a transfer transistor and a driver transistor of a memory cell 22 respectively. Holding operation for the driver transistor by an off-current of the transfer transistor is made stable by keeping a cell ratio at an appropriate value by a word line potential. Operation speed of write-in operation and recovery operation is increased by making voltage difference between digit lines D and DB a higher positive power source VBB than a normal power source VCC.</p> |
