| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element for preventing leakage currents between an n-type clad layer and a p-type clad layer, and for improving ESD breakdown strength, and a method for manufacturing this. SOLUTION: A trench 12, whose cross-section is V-shaped, and whose depth reaches an n-type clad layer 3, is formed in an element isolation region between the light emitting elements of a wafer for forming a semiconductor light emitting element formed until an upper electrode 11, and filled with an insulating film 13, such as a silicon oxide film or a silicon nitride film. Afterwards, the back face of a GaAs substrate 1 is cut so that prescribed thickness can be obtained, and a lower electrode 14 is formed. Then, chip integration into an LED element is carried out by a scribe process. |
