| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystalline Si system thermoelectric converting materials, having a high Seebeck coefficient contained by a new Si system thermoelectric converting materials in which various kinds of dopant elements are included in Si by 20 atom% or less, which can be easily manufactured without damaging electric conductivity, and which can be easily manufactured in the same method as the method for manufacturing an integrated circuit, and a method for manufacturing this polycrystalline Si system thermoelectric converting materials. SOLUTION: An Si-rich layer using Si as main components and a dopant element rich layer using dopant elements as main components are film-formed and laminated on a required substrate made of silicon or glass, and heat treatment is carried out so that organization in which the dopant element rich layer is distributed to the grain field of the Si rich layer in the laminated direction and/or each layer can be generated. Thus, a Seebeck coefficient can be sharply increased, and thermal conductivity can be reduced, and thermoelectric conversion efficiency can be sharply increased, and Si rich in resources can be used as main components, and environmental contamination can be sharply reduced in this thin film-shaped polycrystalline Si system thermoelectric converting materials.
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