| 摘要 |
PROBLEM TO BE SOLVED: To shield the electric field generated between two bit lines and to enable simultaneous reading out and writing without receiving the influence of the crosstalk noise by a coupling capacitor by having a third wiring layer which is interposed between two wiring layers and forms another wiring pattern exclusive of the two bit lines out of the wiring formed memory cells. SOLUTION: The word line RWL1, word line WWL1, pattern wiring GDL, pattern wiring NL1 and pattern wiring NL2 formed of a second aluminum layer are formed between the bit lines RBLi and RBLi/ for read out formed of a third aluminum layer and the bit lines WBLi and WBLi formed of a first aluminum layer. These word line, bit line and pattern wiring formed of the second aluminum layer act as shields to the electric fields generated between the two bit line for reading out and the two bit lines for writing and the interference of the voltage fluctuations between these does not occur.
|
