| 摘要 |
PROBLEM TO BE SOLVED: To form a padded polysilicon part, in such a way that the etching residue of the polysilicon part is not generated. SOLUTION: This manufacturing method contains a process, in which the shape of a pad polysilicon part 6 deposited on the whole face is formed in a shape which does not have a steep step 7. In addition, the method contains a process, in which a mask used to form the pad polysilicon part 6, is etched. By having the steep step 7 which is not generated in a substrate, the etching residue of a polysilicon part is not generated. The process, in which a shape which does not have the steep step is formed, contains a process in which the polysilicon part is coated with a fluid substance (SOG or the like) 8. In addition, the process includes a process, in which an etching-back operation is performed under an etching condition, under which the etching rate of the fluid substance 8 and that of the polysilicon part become nearly equal. The process, in which the mask is etched contains a process in which a resist pattern to be used as a pad, is formed. In addition, the process includes a process, in which the polysilicon part is etched by making use of the resist pattern as a mask and in which the pad polysilicon part is formed. |
