| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a read only memory(ROM) capable of reducing power consumption by decreasing a cell current. SOLUTION: A data read terminal of a memory cell MS1, to which a power supply voltage VDD is supplied, is connected to or disconnected from a bit line and a cell selecting terminal is connected to a word line WL. A load circuit LD1 is connected to a bit line BL and the output side of the bit line BL is connected to a sense amplifier SA. When the data read terminal of the memory cell MS1 and the bit line BL are conducted, a potential difference between the cell selecting terminal connected to the high-level word line WL and the data read terminal connected to the bit line BL to be increased is decreased. Besides, the potential of the data read terminal is made higher than a grounded substrate potential, the threshold value of the memory cell MS1 is increased by generating a substrate bias effect, and power consumption is reduced by decreasing the cell current.</p> |
