| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN based semiconductor light emitting element with high light emitting efficiency. SOLUTION: A buffer layer for simplifying the formation of a GaN based semiconductor layer, a first layer made of AlGaN, and a reflecting layer made of Ti, Zr, Hf, or Ta, or a nitride made of two or more kinds of these metals are formed on a substrate, and a light emitting layer constituted of a GaN based semiconductor, such as In GaN. Thus, the reflecting layer with brightness in metallic color reflects blue-green lights, so that lights in the direction of the substrate generated by the light emitting layer can be reflected on the reflecting layer. Also, the reflecting layer is formed immediately under the light emitting layer, so that the substantially whole part of the lights going to the substrate side can be reflected. |
