PHOTOELECTRIC CONVERSION MEMBER

摘要

PROBLEM TO BE SOLVED: To connect elements in series and to prevent reduction in transducing efficiency that results from losses caused by contact resistance, by providing a connecting semiconductor layer, which is formed between first and second photoelectromotive force elements making direct contact. SOLUTION: On a conductive substrate 8, a P-type polycrystalline Si layer containing a group 3 element of the periodic table is formed with a thickness of 5μm, an n-type polycrystalline Si layer 6 containing a group 5 element of the periodic table is formed with a thickness of 500Å(angstroms), and an amorphous Si layer 5 containing a group 3 element of the periodic table or containing carbon and a group 3 element of the periodic table is formed with a thickness of 500Å. Then, a a-Si layer 4 serving as an intrinsic semiconductor with a thickness of 1μm and additionally an a-Si layer 3 containing a group 5 element of the periodic table or containing carbon and a group 5 element are stacked in this order thereon. A transparent electrode 2, such as ITO, is formed thereon with a thickness of 0.2μm, and current collecting electrodes 1 made of a material such as Ag, solder, In, and Sn are provided at 1 cm pitches. Hence, it is possible to readily connect photovoltaic elements in series and to suppress reduction in conversion efficiency, that results from losses caused by contact resistance.