| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the adhesion between a silicon dioxide film and a barrier metal film is made so as to lower the dielectric constant for increasing wire bond strength. SOLUTION: This semiconductor device comprises a silicon dioxide film 12 formed on a semiconductor substrate 11, a Ti/TiN based barrier metal film 15 formed on the film 12, and an electrode wring 16 formed on the barrier metal film 15, the silicon dioxide film 12 composed of a first and second silicon dioxide films 13, 14, and the second silicon dioxide film 14 at the barrier metal film 15 having a thick film formed by the plasma CVD using SiH4 gas as the main material. |
